Effects of prolonged illumination on the properties of hydrogenated amorphous silicon
- 30 November 1982
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 8 (1-3) , 129-140
- https://doi.org/10.1016/0165-1633(82)90056-9
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Radiation-induced paramagnetism in-Si:HPhysical Review B, 1982
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- Diffusion length of holes in a-Si:H by the surface photovoltage methodApplied Physics Letters, 1981
- On light-induced effect in amorphous hydrogenated siliconJournal of Applied Physics, 1981
- Reversible changes in the oscillator strengths of Si-H vibrations in-Si: H induced by-ion bombardmentPhysical Review B, 1980
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Fatigue effect in luminescence of glow discharge amorphous silicon at low temperaturesSolid State Communications, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977