Electron-nuclear double resonance of dangling-bond centres associated with hydrogen incorporation in aSi:H
- 1 August 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 63 (7) , 629-632
- https://doi.org/10.1016/0038-1098(87)90868-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electron-nuclear double resonance of dangling-bond centres in a-Si:HSolid State Communications, 1987
- Influence of deposition rate on ESR signals in a-SiJournal of Non-Crystalline Solids, 1987
- Level of dangling-bond centres in a-Si: HPhilosophical Magazine Part B, 1986
- Hyperfine studies of dangling bonds in amorphous siliconPhysical Review B, 1986
- The Effects of H and F on the ESR Signals in a-SiJapanese Journal of Applied Physics, 1982
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964