Level of dangling-bond centres in a-Si: H
- 1 November 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 54 (5) , L119-L123
- https://doi.org/10.1080/13642818608236860
Abstract
The depth of the negatively charged dangling-bond centres relative to the edge of the conduction band in a-Si: H has been estimated by photo-induced absorption (PA), PA-detected electron spin resonance and optically detected magnetic resonance measurements at 2K. Estimates of their depth range from 0.6 to 0.75 eV for various samples.Keywords
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