Gap States in Hydrogenated Amorphous Silicon: The Trapped Hole Centres (The a Centres)
- 1 January 1985
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Spin-dependent hole diffusion in a-Si: HPhilosophical Magazine Part B, 1984
- New fabrication process for a-Si photovoltaic devices using cylindrical diode glow dischargeJournal of Non-Crystalline Solids, 1983
- Spin-dependent photoinduced absorption in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1983
- Optically detected magnetic resonance in hydrogen effused a-Si:H : Role of dangling bond centres in the low energy luminescenceJournal of Non-Crystalline Solids, 1983
- Light induced metastable effect on the short lived photoinduced midgap absorption in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1983
- Recombination processes in-Si:H: Spin-dependent photoconductivityPhysical Review B, 1983
- Spin-dependent photoinduced absorption in hydrogenated amorphous silicon: Photoinduced absorption detected ESRSolid State Communications, 1983
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1982
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon: Optically Detected Magnetic ResonanceJournal of the Physics Society Japan, 1981