Level of dangling bond centres and its broadening due to disorder in amorphous silicon as elucidated by optically detected magnetic resonance measurements
- 30 September 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 43 (10) , 751-755
- https://doi.org/10.1016/0038-1098(82)90985-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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