Nature of trapped hole centres (A centres) in a-Si:H : Investigation by optically detected magnetic resonance and photoinduced absorption measurements on a-Si:H a-Si1−xNx:H superlattices
- 31 May 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 66 (8) , 797-800
- https://doi.org/10.1016/0038-1098(88)90388-2
Abstract
No abstract availableKeywords
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