Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H
- 1 February 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (2A) , L138
- https://doi.org/10.1143/jjap.27.l138
Abstract
A microscopic mechanism for annealing of photocreated dangling bonds in a-Si:H is presented taking into account hydrogen plays an important role in annealing of dangling bonds. This model can account for the experimental fact that photocreated dangling bonds as well as thermally created dangling bonds are annealed at relatively low temperatures such as 100–150°C in a-Si:H.Keywords
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