High speed automated pulsed I/V measurement system
- 1 October 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 494-496
- https://doi.org/10.1109/euma.1993.336604
Abstract
Thermal and trap effects in GaAs MESFET and HEMT devices can be accurately studied using Pulsed Gate and Drain measurement systems. Modelling methods based on static, pulsed I/V characteristics along with S parameters can be implemented into nonlinear simulators in order to obtain better agreement with the experiment. This work proposes a new compact instrumentation philosophy for Pulsed I/V measurements (PIVMS) that achieves 16bit resolution in 300ns pulse widths, avoiding the need for complex expensive external instrumentation and/or Hall effect current probes. The measurement system has been designed to meet requirements of high speed automated test systems, tacking about 20sec for extracting a complete set of bias points. Experimental verification shows the performance of this instrumentation setup.Keywords
This publication has 3 references indexed in Scilit:
- Nonlinear GaAs MESFET modeling using pulsed gate measurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Characterization of GaAs devices by a versatile pulsed I-V measurement systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A Fully Automated On-Wafer Pulsed Measurement System, with Variable Pulse-Length and Duty Cycle, for Accurate Large Signal FET ModelingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1989