Semiconductor devices in photonic switching
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal on Selected Areas in Communications
- Vol. 6 (7) , 1131-1140
- https://doi.org/10.1109/49.7833
Abstract
No abstract availableThis publication has 67 references indexed in Scilit:
- Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structureElectronics Letters, 1987
- Absorptive and dispersive bistability in semiconductor injection lasersOptical and Quantum Electronics, 1987
- Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC)Japanese Journal of Applied Physics, 1987
- High Speed Response in Optoelectronic Gated ThyristorJapanese Journal of Applied Physics, 1987
- High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs)Electronics Letters, 1987
- InGaAsP carrier injection modulator integrated with DFB LDElectronics Letters, 1987
- Observation of Room Temperature Excitons in GaSb–AlGaSb Multi-Quantum WellsJapanese Journal of Applied Physics, 1986
- Monolithic array of optoelectronic broad-band switchesIEEE Journal of Solid-State Circuits, 1984
- Switching characteristics of laser diode switchIEEE Journal of Quantum Electronics, 1983
- GaAs rib-waveguide directional-coupler switch with Schottky barriersElectronics Letters, 1978