Raman scattering from InxGa1−xAs/GaAs strained-layer superlattices

8 April 1991

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 58 (14) , 1491-1493
https://doi.org/10.1063/1.105181

Abstract

Measurements of room‐temperature Raman scattering were performed on In_xGa_1−xAs/GaAs strained‐layer superlattices, grown by molecular beam epitaxy, with superlattice periods of 230 Å and In concentration x values of 0.1 and 0.2. We use, for the first time, the ‘‘spatial correlation’’ model as well as the splitting mechanism of the corresponding Raman peaks to account for the line shape of the Raman peak around 291 cm⁻¹.

Keywords

This publication has 30 references indexed in Scilit:

Optical transitions involving unconfined energy states in ${In}_{x}$ ${Ga}_{1 - x}$ As/GaAs multiple quantum wells
Physical Review B, 1989
Concentration-dependent band offset in $\frac{{In}_{x} {Ga}_{1 - x} As}{GaAs}$ strained quantum wells
Physical Review B, 1988
Optical studies in ${In}_{x}$ ${Ga}_{1 - x}$ As/GaAs strained-layer superlattices
Physical Review B, 1988
Photoreflectance study of narrow-well strained-layer ${In}_{x}$ ${Ga}_{1 - x}$ As/GaAs coupled multiple-quantum-well structures
Physical Review B, 1988
Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown ${In}_{x}$ ${Ga}_{1 - x}$ As/GaAs quantum wells
Physical Review B, 1988
Large valence-band offset in strained-layer ${In}_{x} {Ga}_{1 - x} As$ -GaAs quantum wells
Physical Review B, 1987
Optical investigation of a new type of valence-band configuration in ${In}_{x}$ ${Ga}_{1 - x}$ As-GaAs strained superlattices
Physical Review B, 1985
Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
Physical Review Letters, 1984
Defects in epitaxial multilayers
Journal of Crystal Growth, 1975
Infrared Reflection Spectra of ${Ga}_{1 - x} {In}_{x} As$ : A New Type of Mixed-Crystal Behavior
Physical Review Letters, 1968