Photoelectric and structural properties of a-Si1-xGex: H alloys prepared using Si2H6 and GeH4
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 735-741
- https://doi.org/10.1016/0169-4332(88)90374-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1986
- Structural, electrical, and optical properties of a-:H and an inferred electronic band structurePhysical Review B, 1985
- Chemical bonding of hydrogen and oxygen in glow-discharge–deposited thin films ofa-Ge:H anda-Ge:(H,O)Physical Review B, 1985
- Preparation of photoconductive a-SiGe alloy by glow dischargeJournal of Non-Crystalline Solids, 1983
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979