Comparison of MC and MD calculations of slowing down of ions with low energies

Abstract
The energy loss of low energy (<1 keV) B ions traversing a very thin Si crystal is calculated using a Monte Carlo (MC) and a Molecular Dynamics (MD) computer code, respectively. The MC simulation is based on a modified binary collision model where large range interactions are treated separately within the momentum approximation. Because of the small thickness of the Si crystal the MD calculations are performed for the whole crystal considered, using the Stillinger-Weber many-body potential for silicon. For the B-Si interatomic interaction in both codes the same numerically calculated potential is used. By comparison of the MC and MD results the validity of the binary collision model is discussed.

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