Formulation of mobility fluctuation 1f noise in bipolar junction transistors
- 30 November 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (11) , 1541-1545
- https://doi.org/10.1016/0038-1101(93)90025-l
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Location of low-frequency noise sources in submicrometer bipolar transistorsIEEE Transactions on Electron Devices, 1992
- Fundamental 1/ƒ noise in silicon bipolar transistorsSolid-State Electronics, 1988
- New formulation of the current and charge relations in bipolar transistor modeling for CACD purposesIEEE Transactions on Electron Devices, 1985
- Proposed discrimination between 1/f noise source in transistorsSolid-State Electronics, 1982