Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment
- 1 July 1992
- journal article
- review article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (7) , 1717-1731
- https://doi.org/10.1109/16.141239
Abstract
No abstract availableThis publication has 62 references indexed in Scilit:
- Electrical transport properties in polysilicon emitters investigated by variation of poly-Si thicknessPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Characterization of polycrystalline silicon contacts by photoconductance measurementsJournal of Applied Physics, 1990
- Effect of annealing on polysilicon emitter transistorsCanadian Journal of Physics, 1989
- A comparison of different deposition techniques for fabricating polysilicon contacted emitter bipolar transistorsJournal of Vacuum Science & Technology B, 1988
- Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistorsIEEE Transactions on Electron Devices, 1988
- Informed device design and gain-speed trade-off for self-aligned polysilicon-emitter transistorsSolid-State Electronics, 1988
- Minority-carrier hole diffusion length in heavily-doped polysilicon and its influence on polysilicon-emitter transistorsIEEE Transactions on Electron Devices, 1988
- The role of the interfacial layer in bipolar (poly-Si)-emitter transistorsSolid-State Electronics, 1987
- The effect of thin interfacial oxides on the electrical characteristics of silicon bipolar devicesIEEE Transactions on Electron Devices, 1987
- Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1987