Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8) , 1334-1343
- https://doi.org/10.1109/16.2556
Abstract
No abstract availableThis publication has 48 references indexed in Scilit:
- Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot LasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Minority-carrier hole diffusion length in heavily-doped polysilicon and its influence on polysilicon-emitter transistorsIEEE Transactions on Electron Devices, 1988
- Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1988
- Effect of Hydrogen implantation on polysilicon p-n junctionsIEEE Transactions on Electron Devices, 1986
- Hydrogenation by ion implantation for scaled SOI/PMOS transistorsIEEE Electron Device Letters, 1985
- Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited filmsJournal of Applied Physics, 1984
- Enhanced conductivity in plasma-hydrogenated polysilicon filmsApplied Physics Letters, 1980
- A minority-carrier transport model for polysilicon contacts to silicon bipolar devices, including solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Crystallization of amorphous silicon filmsPhysica Status Solidi (a), 1978
- Microstructural Analysis of Evaporated and Pyrolytic Silicon Thin FilmsJournal of the Electrochemical Society, 1973