Grain growth in boron doped LPCVD polysilicon films
- 1 February 1990
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 5 (2) , 360-364
- https://doi.org/10.1557/jmr.1990.0360
Abstract
Dopant induced grain growth in LPCVD polysilicon films has been investigated using BBr3 as the diffusion source at 900 and 950 °C. TEM and sheet resistance measurements indicate rapid growth under such doping conditions. Results are compared with the grain growth observed during (a) PBr3 doping of similar films, and (b) during anneals in ambients containing 1% oxygen in nitrogen, similar to that used during BBr3 or PBr3 doping. The results clearly demonstrate the rapid grain growth induced by both types of dopants, although phosphorus is more effective in inducing this grain growth.Keywords
This publication has 11 references indexed in Scilit:
- Polycrystalline Silicon for Integrated Circuit ApplicationsPublished by Springer Nature ,1988
- Grain Growth in Polycrystalline Silicon FilmsMRS Proceedings, 1987
- Interactions in metallization systems for integrated circuitsJournal of Vacuum Science & Technology B, 1984
- Grain‐Growth Mechanisms in PolysiliconJournal of the Electrochemical Society, 1982
- Electrical Properties of Thermally and Laser Annealed Polycrystalline Silicon Films Heavily Doped with Arsenic and PhosphorusJournal of the Electrochemical Society, 1982
- Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealingSolid-State Electronics, 1981
- Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: I . TheoryJournal of the Electrochemical Society, 1979
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978
- Role of point defects in the growth of the oxidation-induced stacking faults in siliconPhysical Review B, 1977
- Recrystallization processes in polycrystalline siliconApplied Physics Letters, 1975