Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealing
- 31 January 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (1) , 49-55
- https://doi.org/10.1016/0038-1101(81)90211-2
Abstract
No abstract availableKeywords
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