An application of selective area MOVPE at atmospheric pressure to the realisation of a DBR laser
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindiumJournal of Electronic Materials, 1986
- A new method for the growth of GaAs epilayer at low H2 pressureJournal of Crystal Growth, 1978