Nanoscale CMOS
- 1 April 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 87 (4) , 537-570
- https://doi.org/10.1109/5.752515
Abstract
This paper examines the apparent limits, possible extensions, and applications of CMOS technology in the nanometer regime. Starting from device scaling theory and current industry projections, we analyze the achievable performance and possible limits of CMOS technology from the point of view of device physics, device technology, and power consumption. Various possible extensions to the basic logic and memory devices are reviewed, with emphasis on novel devices that are structurally distinct front conventional bulk CMOS logic and memory devices. Possible applications of nanoscale CMOS are examined, with a view to better defining the likely capabilities of future microelectronic systems. This analysis covers both data processing applications and nondata processing applications such as RF and imaging. Finally, we speculate on the future of CMOS for the coming 15-20 years.Keywords
This publication has 159 references indexed in Scilit:
- History of some early developments in ion-implantation technology leading to silicon transistor manufacturingProceedings of the IEEE, 1998
- Flash memory cells-an overviewProceedings of the IEEE, 1997
- Power conscious CAD tools and methodologies: a perspectiveProceedings of the IEEE, 1995
- Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variationIEEE Journal of Solid-State Circuits, 1995
- A 20 GHz 8 bit multiplexer IC implemented with 0.5 μm WN/sub x//W-gate GaAs MESFET'sIEEE Journal of Solid-State Circuits, 1994
- Scaling of MOS technology to submicrometer feature sizesAnalog Integrated Circuits and Signal Processing, 1994
- A novel high-speed silicon bipolar transistor utilizing SEG and CLSEGIEEE Transactions on Electron Devices, 1994
- A high-performance 0.25- mu m CMOS technology. I. Design and characterizationIEEE Transactions on Electron Devices, 1992
- Evolution of the MOS transistor-from conception to VLSIProceedings of the IEEE, 1988
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982