Misorientation dependence of epitaxial growth on vicinal GaAs(001)
- 15 September 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (11) , 6825-6833
- https://doi.org/10.1103/physrevb.46.6825
Abstract
The misorientation direction dependence of the transition from growth by the formation and coalescence of two-dimensional clusters to growth by step advancement has been examined systematically with reflection high-energy electron-diffraction (RHEED) measurements during molecular-beam epitaxy on GaAs(001). Accompanying simulations of a solid-on-solid model have reproduced qualitatively all of the dominant features of the measured RHEED through comparisons based upon the step densities of the simulated surfaces. We have reported earlier that the Ga flux and misorientation-angle dependence of RHEED on vicinal GaAs(001) surfaces misoriented towards the [010] direction can be both qualitatively and quantitatively reproduced by a suitably parametrized solid-on-solid model. Here, we have modified the model to account for the anisotropy in the surface kinetics expected for surfaces misoriented along the [110] and [1¯10] directions. Two distinct origins of this anisotropy have been considered, both separately and together: one that is based only on the nearest-neighbor environment and one that is based on attempt frequencies for migration, which is independent of the nearest-neighbor environment. Both effects can contribute to the anisotropy of the diffusion constant and to the temperature at which growth becomes dominated by step advancement, but the growth-front morphologies differ considerably in the two cases. Although diffraction effects have impeded direct quantitative comparisons between measured RHEED and simulated step density on these surfaces, qualitative conclusions can still be made and simulated morphologies can be compared with scanning tunneling microscopy. Our comparisons suggest that the origin of the anisotropic growth-mode transition stems mainly from anisotropic incorporation kinetics, modeled by the nearest-neighbor environment, rather than anisotropic adatom mobility. Moreover, even if the mobility is anisotropic, the favored direction is orthogonal to that reported by others.Keywords
This publication has 20 references indexed in Scilit:
- Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)Physical Review B, 1992
- Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001)Applied Physics Letters, 1992
- Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxyApplied Physics Letters, 1991
- Anisotropic Lateral Growth of GaAs by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) SubstratesJapanese Journal of Applied Physics, 1989
- Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structuresJournal of Crystal Growth, 1989
- Anisotropic surface migration of Ga atoms on GaAs (001)Journal of Crystal Growth, 1989
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981