Behaviour of light impurity elements in the production of semiconductor silicon
- 1 March 1974
- journal article
- Published by Springer Nature in Journal of Radioanalytical and Nuclear Chemistry
- Vol. 19 (1) , 109-128
- https://doi.org/10.1007/bf02515271
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Charged particle activation analysis for carbon, nitrogen and oxygen in semiconductor siliconJournal of Radioanalytical and Nuclear Chemistry, 1970
- Concentration and Behavior of Carbon in Semiconductor SiliconJournal of the Electrochemical Society, 1970
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Factors Determining the Oxygen Content of Liquid Silicon at Its Melting PointJournal of Applied Physics, 1958
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957