Some properties of thin aluminium nitride films formed in a glow discharge
- 1 January 1974
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 20 (1) , 11-16
- https://doi.org/10.1016/0040-6090(74)90028-5
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Dielectric Properties of Reactively Sputtered Films of Aluminum NitrideJournal of Vacuum Science and Technology, 1969
- Capacitances and Differential Negative Resistances of MIM StructuresPhysica Status Solidi (b), 1969
- Growth Characteristics of AlN Films Pyrolytically Deposited on SiJournal of Applied Physics, 1968
- VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERSApplied Physics Letters, 1968
- Currents through thin films of aluminum nitrideJournal of Physics and Chemistry of Solids, 1968
- Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au DiodesJournal of Applied Physics, 1965
- Potential Distribution and Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1964
- Impurity Conduction and Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1964
- Low-Frequency Negative Resistance in Thin Anodic Oxide FilmsJournal of Applied Physics, 1962
- Tunneling Through Thin Insulating LayersJournal of Applied Physics, 1961