Infrared ellipsometry study of the thickness-dependent vibration frequency shifts in silicon dioxide films
- 1 August 1995
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America A
- Vol. 12 (8) , 1797-1804
- https://doi.org/10.1364/josaa.12.001797
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 18 references indexed in Scilit:
- Optical Effects in IR Spectroscopy: Thickness-Dependent Positions of Absorbance Lines in Spectra of Thin FilmsApplied Spectroscopy, 1992
- Thickness-Dependent Frequency Shift in Infrared Spectral Absorbance of Silicon Oxide Film on SiliconApplied Spectroscopy, 1990
- An FT-IR study of silicon dioxides for VLSI microelectronicsSemiconductor Science and Technology, 1990
- Densification and porosity in low-temperature-deposited oxideJournal of Non-Crystalline Solids, 1989
- Intriguing Absorption Band Behavior of IR Reflectance Spectra of Silicon Dioxide on SiliconApplied Spectroscopy, 1988
- Silicon-silicon dioxide interface: An infrared studyJournal of Applied Physics, 1987
- Stress and Density Effects on Infrared Absorption Spectra of Silicate Glass FilmsJournal of the Electrochemical Society, 1986
- Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- The infrared optical properties of SiO2 and SiO2 layers on siliconJournal of Applied Physics, 1979
- The control of errors in i.r. spectrophotometry—IV. Corrections for dispersion distortion and the evaluation of both optical constantsSpectrochimica Acta Part A: Molecular Spectroscopy, 1976