Initial Oxidation of Si(100)2×1 by Ozone: Transition of Growth Kinetics from Adsorption to Ultrathin Film Growth
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4B) , L357
- https://doi.org/10.1143/jjap.39.l357
Abstract
We have investigated the initial oxide growth kinetics on Si(100)2×1 by highly concentrated ozone (>80%) using X-ray photoelectron spectroscopy. Initial oxidation of 550°C, while no further growth of oxide films >0.6 nm was observed on the surface at 0.6 nm which is difficult to synthesize using molecular oxygen under the same processing conditions.Keywords
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