Atomic transport during growth of ultrathin dielectrics on silicon
- 31 December 1999
- journal article
- review article
- Published by Elsevier in Surface Science Reports
- Vol. 36 (1-8) , 1-166
- https://doi.org/10.1016/s0167-5729(99)00006-0
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- High resolution ion scattering study of silicon oxynitridationApplied Physics Letters, 1996
- Nitrogen transport during rapid thermal growth of silicon oxynitride films in N2OApplied Physics Letters, 1996
- Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methodsApplied Physics Letters, 1996
- Furnace gas-phase chemistry of silicon oxynitridation in N2OApplied Physics Letters, 1996
- The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structureApplied Physics Letters, 1995
- Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments modelMicroelectronic Engineering, 1993
- Role of interfacial nitrogen in improving thin silicon oxides grown in N2OApplied Physics Letters, 1993
- Model for dielectric growth on silicon in a nitrous oxide environmentApplied Physics Letters, 1993
- Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked filmsSolid-State Electronics, 1988
- Microanalysis by the direct observation of nuclear reactions using a 2 MeV Van de GraaffNuclear Instruments and Methods, 1971