Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model
- 31 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 35-38
- https://doi.org/10.1016/0167-9317(93)90125-o
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- High Pressure Oxidation of Silicon in Dry OxygenJournal of the Electrochemical Society, 1982
- Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogenJournal of Applied Physics, 1977
- The Effects of Trace Amounts of Water on the Thermal Oxidation of Silicon in OxygenJournal of the Electrochemical Society, 1974
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965