Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films
- 31 October 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (10) , 1501-1503
- https://doi.org/10.1016/0038-1101(88)90022-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A true single-transistor oxide-nitride-oxide EEPROM deviceIEEE Electron Device Letters, 1987
- Study of carrier trapping in stacked dielectricsIEEE Electron Device Letters, 1986
- New results on electron injection, hole injection, and trapping in MONOS nonvolatile memory devicesIEEE Transactions on Electron Devices, 1985
- Evidence of hole flow in silicon nitride for positive gate voltageIEEE Transactions on Electron Devices, 1984
- A review of recent experiments pertaining to hole transport in Si3N4IEEE Transactions on Electron Devices, 1978