Erratum: “Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy” [J. Appl. Phys. 81, 1905 (1997)]
- 15 December 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (12) , 6372
- https://doi.org/10.1063/1.366538
Abstract
No abstract availableThis publication has 39 references indexed in Scilit:
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