The nucleation of high-T c Nb3Ge in the presence of impurities
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4) , 359-361
- https://doi.org/10.1063/1.90337
Abstract
Analyses of high‐Tc Nb3Ge films show that they all have a peak in oxygen concentration near the substrate‐film interface and that their lattice parameters in that region are abnormally large. It is proposed that high‐Tc Nb3Ge is a metastable phase which is formed via a homoepitaxial process from a large lattice parameter A15 Nb‐Ge phase. This phase near the interface is believed stable due to an expanded lattice resulting from the presence of impurities.Keywords
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