AC hopping conductivity and DLTS studies on electron-irradiated boron-doped silicon
- 1 January 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (1) , 20-29
- https://doi.org/10.1088/0268-1242/2/1/003
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Configurationally bistableCcenter in quenched Si:B: Possibility of a boron-vacancy pairPhysical Review B, 1985
- A bistable defect in electron-irradiated boron-doped siliconJournal of Physics C: Solid State Physics, 1985
- Interstitial boron in silicon: A negative-systemPhysical Review B, 1980
- Detection of minority-carrier traps using transient spectroscopyElectronics Letters, 1979
- EPR of a trapped vacancy in boron-doped siliconPhysical Review B, 1976
- Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boronPhysical Review B, 1975
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Electron-Irradiation Effects in Silicon at Liquid-Helium Temperatures Using ac Hopping ConductivityPhysical Review B, 1971
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961