Selective Nucleation of Single Crystal CVD Diamond and its Applicability to Semiconductor Devices
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Using selective nucleation at edges or corners of μ m-size dots of Si, periodically arrayed diamond particles have been reproducibly fabricated. The particles are grown from single nuclei and have nearly-single crystal features. The properties of the diamond arrays compared with polycrystalline films have been investigated using cathodoluminescence and Schottky diodes.Keywords
This publication has 5 references indexed in Scilit:
- Selective nucleation and growth of diamond particles by plasma-assisted chemical vapor depositionApplied Physics Letters, 1989
- Selective deposition of diamond crystals by chemical vapor deposition using a tungsten-filament methodApplied Physics Letters, 1988
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Manipulation of nucleation sites and periods over amorphous substratesApplied Physics Letters, 1988
- Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour DepositionJapanese Journal of Applied Physics, 1988