Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/β-Si3N4(0001) double-buffer structure
- 1 December 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (22) , 4530-4532
- https://doi.org/10.1063/1.1629384
Abstract
We present a stacked buffer mechanism for heteroepitaxialgrowth with large lattice mismatch. The stacked buffer consists of constituent layers, which can form coincident lattices at layer/layer and layer/substrate interfaces. For the case of GaN-on-Si(111) heteroepitaxy, we utilize the 1:2 and 5:2 coincident lattices formed at the β- Si 3 N 4 (0001)/ Si (111) and AlN (0001)/β- Si 3 N 4 (0001) interfaces, respectively, to facilitate the double-buffer layer for GaN-on-Si heteroepitaxialgrowth. By using this buffer technique, we resolve the issue of autodoping resulting from Si outdiffusion when grown with a single AlN(0001) buffer. As a result, the epitaxial quality of GaNfilm is also significantly improved.Keywords
This publication has 19 references indexed in Scilit:
- Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopyPhysical Review B, 2002
- Structure Determination of the-Surface: A Combined Study of Kikuchi Electron Holography, Scanning Tunneling Microscopy, andab initioCalculationsPhysical Review Letters, 2001
- High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammoniaApplied Physics Letters, 1999
- Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical propertiesJournal of Crystal Growth, 1999
- Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxyJournal of Crystal Growth, 1999
- Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxyPhysical Review B, 1998
- Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) SiApplied Physics Letters, 1996
- Observation of inversion layers at AlN-Si interfacesfabricated by metal organicchemical vapour depositionElectronics Letters, 1996
- Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1992
- Epitaxial growth of aluminum nitride on Si(111) by reactive sputteringApplied Physics Letters, 1991