Shallow p+ layer in GaAs formed by zinc ion implantation
- 15 May 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10) , 798-799
- https://doi.org/10.1063/1.92135
Abstract
A shallow p+ layer with a steep boundary was obtained by Zn ion implantation and a capless annealing in an arsenic ambient. A capped annealing with a plasma deposited Si3N4 film resulted in a carrier concentration profile broadened by the diffusion enhanced by the interfacial stress between the capping film and the semiconductor. The p+ layer had a peak carrier concentration of 8×1019 cm−3 and a thickness of less than 1000 Å. Arsenic pressure in the annealing ambient also suppressed the enhanced diffuison of Zn in the ion‐implanted GaAs.Keywords
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