The Formation of Rugged Surface Polycrystalline Silicon Using Cl2/O2 Plasmas: The Role of Oxygen
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- An investigation of the roughening of silicon(100) surfaces in Cl2 reactive ion etching plasmas by i n s i t u ellipsometry and quadrupole mass spectrometryJournal of Vacuum Science & Technology B, 1989
- Dopant Segregation at Polycrystalline Silicon Grain Boundaries in Device Fabrication ProcessesMRS Proceedings, 1989
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980