Electrical and optical properties of the neutral nickel acceptor in gallium phosphide
- 10 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (34) , 6161-6167
- https://doi.org/10.1088/0022-3719/17/34/016
Abstract
Concentration measurements using the electron paramagnetic resonance (EPR) signature of the Ni3+ (3d7) state in GaP have been compared with thermal emission and photocapacitance data measured on the same samples. These data combined with EPR photo-quenching measurements provide a definitive assignment of a state with a thermal activation energy for hole emission of 510 meV to the Ni3+ to Ni2+ transition. The optical threshold for the same transition is 520 meV and the cross section for thermal capture of a hole into Ni2+ is 1.3*10-16 cm2 at 240K.Keywords
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