Field effect spectroscopy of CdSe-insulator interface states
- 1 August 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5250-5256
- https://doi.org/10.1063/1.329430
Abstract
We have developed a new technique termed field effect spectroscopy (FES) to probe semiconductor‐insulator interface states optically. It consists of photoconductivity measurements of the semiconductor channel between source and drain of a gated thin‐film transistor. By varying the gate voltage and thereby the potential at the insulator‐semiconductor interface, one can vary the relative contributions of bulk and interface states to the resistivity of the semiconductor channel. FES results for a variety of Al2O3:CdSe and SiO2:CdSe interface reveal a strong dependence of interface state density on fabrication conditions.This publication has 12 references indexed in Scilit:
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