Monte Carlo Calculations of Internal Photoemission Yields in M-I-M Thin-Film Structures
- 15 February 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (3) , 1791-1796
- https://doi.org/10.1063/1.1656431
Abstract
Photomeasurements on Al–Al2O3–Au thin‐film sandwiches revealed a very asymmetric barrier shape, Φ1 and Φ2 being 1.8 and 4 eV, respectively. The image‐force lowering of the barrier can be explained by the high‐frequency dielectric constant. When photoemission measurements are performed only in the visible region, the Au electrode will not emit photoelectrons because of the large Φ2 value. The Al electrode, however, will emit photoelectrons if the Au electrode is sufficiently positively biased. The existence of only one source for photoelectrons facilitates the interpretation of photomeasurements. Monte Carlo calculations were performed to determine the scattering of hot electrons within these films. Electron‐optical phonon scattering was assumed and a mean free path of 10 Å was found. The method to determine scattering by photoemission gives values on scattering within the image‐force region.This publication has 8 references indexed in Scilit:
- Monte Carlo Calculations of Electron Scattering in PhotoemissionPhysical Review B, 1967
- The Tunneling Time of an ElectronJournal of Applied Physics, 1967
- Hot Electron Energy Loss in Tunnel Cathode StructuresJournal of Applied Physics, 1966
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Photovoltage Measurements on an Al-Al2O3-Al Thin-Film SandwichJournal of Applied Physics, 1966
- Photoemissive Determination of Barrier Shape in Tunnel JunctionsPhysical Review Letters, 1965
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky BarriersJournal of Applied Physics, 1964
- Monte Carlo Calculations Pertaining to the Transport of Hot Electrons in MetalsPhysical Review B, 1964