High-permittivity lead-based perovskite dielectrics for DRAM applications
- 1 November 1994
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 5 (3) , 235-244
- https://doi.org/10.1080/10584589408017017
Abstract
Suppression of the nonvolatile polarization in lead zirconate titanate films by La doping or by use of films 100 nm or less in thickness provides the highest charge storage densities yet observed. These films also satisfy leakage current density and TDDB requirements for very high density DRAMs, and show good resistance to fatigue.Keywords
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