Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy
- 1 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7) , 611-613
- https://doi.org/10.1063/1.93198
Abstract
Photothermal ionization spectroscopy has been used to determine the residual donor species present and their relative concentrations in the highest purity molecular beam epitaxial (MBE) n-GaAs yet reported. Data are presented for samples grown in two different MBE growth reactors: one using elemental As and the other using cracked AsH3 as the arsenic source. In spite of the substantial differences between growth systems, the donor backgrounds are quite similar.Keywords
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