Ion implantation technique for simulatneous formation of a shallow silicon p-n junction and a shallow silicide-silicon ohmic contact
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (3-4) , 383-389
- https://doi.org/10.1016/0040-6090(83)90580-1
Abstract
No abstract availableKeywords
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