Quantum states interaction in hot carriers accumulation and stimulated emission processes in p-Ge

Publisher Website
Google Scholar
Abstract
The role of quantum effects determined by interaction and mixing of light and heavy hole states in the scattering processes and population inversion of hot carriers in Ge in crossed E perpendicular to H fields is studied. The results of experimental investigations of stimulated emission for intersubband and cyclotron transitions are presented, the experimental data being in good agreement with quantum model calculations.