Anisotropy and uniaxial stress effects in submillimetre stimulated emission spectra of hot holes in germanium in strong E perpendicular to H fields

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Abstract
The light hole cyclotron stimulated emission in p-Ge in strong E perpendicular to H fields was studied as a function of E and H field orientation and uniaxial stress applied to the crystal. Quantum model calculations of light hole scattering rates and Landau level population are used to interpret the results. The low frequency part of the intersubband emission spectra was investigated, and new emission lines were found. The role of impurity transitions in stimulated emission processes is discussed.