Transient and steady-state optoelectronic properties of μc-Si:H

This publication has 8 references indexed in Scilit:

• Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon
  Physical Review B, 1987
• Dependence of electrical conductivity of nanocrystalline silicon on structural properties and the effect of substrate bias
  Philosophical Magazine Part B, 1987
• The Staebler-Wronski effect in microcrystalline silicon films
  Solid State Communications, 1986
• The dynamics of photoexcited carriers in microcrystalline silicon
  Journal of Applied Physics, 1984
• Characterization of plasma-deposited microcrystalline silicon
  Philosophical Magazine Part B, 1982
• Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °C
  Journal of Applied Physics, 1981
• Adiabatic bond charge model for the phonons in diamond, Si, Ge, andα−Sn
  Physical Review B, 1977
• The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport
  Solid-State Electronics, 1968