On the way to carbon nitride
- 30 November 1997
- journal article
- Published by Autonomous Non-profit Organization Editorial Board of the journal Uspekhi Khimii in Russian Chemical Reviews
- Vol. 66 (11) , 901-911
- https://doi.org/10.1070/rc1997v066n11abeh000378
Abstract
No abstract availableThis publication has 135 references indexed in Scilit:
- C-Nx thin films deposited by pulsed high energy plasma bombardmentMaterials Letters, 1996
- Formation of β-C3N4 phase in C-N films deposited by reactive ionized cluster beam methodMaterials Letters, 1996
- Neutron and x-ray diffraction studies of a-C:N:HJournal of Physics: Condensed Matter, 1996
- Observations of Laue pattern and stability of beta -C3N4grainsJournal of Physics: Condensed Matter, 1995
- Growth of CN films by reactive ionized cluster beam depositionJournal of Crystal Growth, 1995
- Formation of the crystalline β-C3N4 phase by dual ion beam sputtering depositionMaterials Letters, 1995
- Formation of Carbon Nitride Films by Means of Ion Assisted Dynamic Mixing (IVD) MethodJapanese Journal of Applied Physics, 1993
- Structure and bonding studies of the C:N thin films produced by rf sputtering methodJournal of Materials Research, 1990
- A novel graphite-like material of composition BC3, and nitrogen–carbon graphitesJournal of the Chemical Society, Chemical Communications, 1986
- Some effects of heteroatom size and reactivity on low-energy ion implantation in diamond, revealed by X-ray induced electron spectroscopy and oxidative depth profilingProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1980