Realization of crescent-shaped SiGe quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy
- 15 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (20) , 2789-2791
- https://doi.org/10.1063/1.110335
Abstract
SiGe/Si quantum wire structures were successfully fabricated on a V-groove patterned Si substrate by using gas-source Si molecular beam epitaxy (GS-SiMBE). A cross sectional image of transmission electron microscope clarified a crescent-shaped SiGe layer at the bottom of the V-groove owing to anisotropy of the growth rate on the different crystal orientations in GS-SiMBE.Keywords
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