Impurity Phonon Modes in Ge-Si

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Abstract
The coherent-potential-approximation theory for lattice vibrations of crystals containing substitutional impurity atoms has been used to calculate phonon spectra in Ge with 9.2-at.% Si and the results have been compared with experimental data obtained by coherent-inelastic neutron-scattering techniques. The theory has been found to predict accurately both the position and the width of the impurity band. Line shapes of scattered-neutron groups have been calculated for various experimental conditions and the results are in good agreement with experimental results.