Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-on-Glass Films Using Different Methods of Nondestructive Instrumentation
- 1 April 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (4A) , L323
- https://doi.org/10.1143/jjap.40.l323
Abstract
The pore sizes of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) thin films having different k values (k=1.8–2.5) are comparatively studied using different nondestructive instrumental ways and also with reference to sorption porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.Keywords
This publication has 7 references indexed in Scilit:
- Determination of pore size distribution in thin films by ellipsometric porosimetryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Determination of pore-size distribution in low-dielectric thin filmsApplied Physics Letters, 2000
- Properties of nanoporous silica thin films determined by high-resolution x-ray reflectivity and small-angle neutron scatteringJournal of Applied Physics, 2000
- Film Properties of Low-Density and Ultra-Low-Dielectric-Constant MaterialMRS Proceedings, 1999
- Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer DielectricMRS Bulletin, 1997
- Integration of Low-k Dielectric Materials Into Sub-0.25-μm InterconnectsMRS Bulletin, 1997
- Novel Porous Films Having Low Dielectric Constants Synthesized by Liquid Phase Silylation of Spin-On Glass Sol for Intermetal DielectricsJapanese Journal of Applied Physics, 1997