Surface chemistry on semiconductors studied by molecular-beam reactive scattering
- 31 January 1994
- journal article
- review article
- Published by Elsevier in Surface Science Reports
- Vol. 19 (7-8) , 285-380
- https://doi.org/10.1016/0167-5729(94)90003-5
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Applications of MBMS and surface spectroscopic techniques in the study of reaction mechanisms in CBE; investigations of the reactivity of tritertiarybutylgallium and triisobutylgallium as alternative precursors for epilayer growthJournal of Crystal Growth, 1992
- Growth and MBMS studies of reaction mechanisms for InxGa1−xAs CBEJournal of Crystal Growth, 1992
- Reactive sticking coefficient of silane on the Si(111)-(7×7) SurfaceChemical Physics Letters, 1989
- Atomic layer epitaxy for the growth of heterostructure devicesJournal of Crystal Growth, 1988
- Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 systemJournal of Crystal Growth, 1988
- Kinetic theory of desorption: Energy and angular distributionsZeitschrift für Physik B Condensed Matter, 1983
- Molecular beam scattering from solid surfacesAdvances in Colloid and Interface Science, 1975
- Reactive scattering from solid surfaces Treatment of lock-in detector signals from modulated molecular beamsJournal of Catalysis, 1968
- Sticking probabilities by an effusive beam technique The germanium-oxygen systemJournal of Catalysis, 1967
- Sticking probability of oxygen molecules on single crystals of germaniumJournal of Catalysis, 1964