Effect of oxygen and carbon segregation on the electrical properties of grain boundaries in silicon
- 1 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 353-358
- https://doi.org/10.1016/0921-5107(89)90270-5
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- The role of the extended defects on the physical properties of electronic ceramicsMaterials Chemistry and Physics, 1989
- Negative (bright) EBIC contrast at oxygen induced defects in siliconPhysica Status Solidi (a), 1987
- Charged defect states at silicon grain boundariesJournal of Applied Physics, 1986
- Defect states in plastically deformed p-type silicon crystals investigated by the Hall effectJournal of Applied Physics, 1983
- Electron tunneling through GaAs grain boundariesApplied Physics Letters, 1982
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980
- The dc voltage dependence of semiconductor grain-boundary resistanceJournal of Applied Physics, 1979
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- The Generalized Path Variable MethodJournal of the Physics Society Japan, 1963