Experimental location of the surface and bulk 1f noise currents in low-noise, high-gain NPN planar transistors
- 31 December 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (12) , 1429-1434
- https://doi.org/10.1016/0038-1101(73)90058-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of temperature on the base resistance and the noise factor of a bipolar junction transistorElectronics Letters, 1972
- Precise wideband Gaussian noise sources using JN FET amplifiers and resistor noiseJournal of Physics E: Scientific Instruments, 1972
- Surface and bulk effects in low frequency noise in NPN planar transistorsSolid-State Electronics, 1970
- Low-frequency noise figure and its application to the measurement of certain transistor parametersIRE Transactions on Electron Devices, 1962